DocumentCode
2119030
Title
Very Low-Intermodulation GaAs Mixers with Negative Feedback
Author
Onodera, Kiyonitsu ; Muraguchi, Masahir
Author_Institution
NTT LSI Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan
Volume
1
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
642
Lastpage
647
Abstract
A novel circuit configuration for GaAs FET mixers is proposed. An RC negative feedback technique on the drain LO injection GaAs FET mixer brings about substantial improvement in the 3rd-order intermodulation distortion property without conversion gain falloff. This effect is still more remarkable with higher LO power at the drain. Measured performance of a fabricated 1.9-GHz-band MMIC GaAs FET mixer shows more than an 8-dB improvement in the 3rd-order intermodulation intercept point over a conventional GaAs FET mixer with increased conversion gain.
Keywords
Capacitance; Equivalent circuits; FETs; Gallium arsenide; Intermodulation distortion; L-band; Laboratories; Negative feedback; Radio frequency; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337283
Filename
4138328
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