Title :
8-12GHz VCO with SiGe Heterojunction Bipolar Transistor
Author :
Gruhle, A. ; Kibbel, H. ; Speck, R.
Author_Institution :
Dornier, D-88039 Friedrichshafen, Germany
Abstract :
A hybrid 8-12 GHz VCO has been built using a SiGe heterojunction bipolar transistor (HBT) in common-emitter-configuration. In order to achieve the wide frequency range only lumped elements were used. Transistors and varactors were fabricated on the same high-resistivity substrate using the same MBE-grown layers. The chosen doping profile resulted in a linear dependence of the output frequency on the varactor voltage.
Keywords :
Capacitance; Circuits; Doping profiles; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337284
