Electrical Properties of Si-Doped AlSb Polycrystalline Films by Co-Sputtering

Author

He, Jianxiong ; Wu, Lili ; Huang, Zheng ; Hao, Xia ; Feng, Lianghuan ; Zheng, Jiagui ; Zhang, Jingquan ; Li, Wei ; Li, Bing

Author_Institution

Coll. of Mater. Sci. .& Eng., Sichuan Univ., Chengdu, China

fYear

2010

fDate

28-31 March 2010

Firstpage

1

Lastpage

3

Abstract

Si-doped AlSb polycrystalline films were grown on silex by magnetron co-sputtering. The conducting type, Hall mobility and carrier concentration of the films were determined. The films appear to be p-type indicating Si is shown to be predominantly an acceptor in AlSb, and holes as dominant charge carriers. Scanning electronic microscope (SEM) shows that prepared film is uniform and compact. The conductivity activation energy calculation result reveals the Si acceptor level is very close to the top of the valence band.

Keywords

Hall mobility; III-V semiconductors; aluminium compounds; carrier density; electrical conductivity; impurity states; semiconductor doping; semiconductor thin films; silicon; sputter deposition; valence bands; AlSb:Si; Hall mobility; SEM; carrier concentration; charge carriers; conducting type; electrical property; magnetron co-sputtering; scanning electron microscopy; silicon-doped polycrystalline films; valence band; Aluminum; Atomic measurements; Conductive films; Conductivity; Hall effect; Optical films; Plasma measurements; Scanning electron microscopy; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific

Conference_Location

Chengdu

Print_ISBN

978-1-4244-4812-8

Electronic_ISBN

978-1-4244-4813-5

Type

conf

DOI

10.1109/APPEEC.2010.5449463

Filename

5449463