Title :
An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K
Author :
Sim, J.H. ; Kuo, J.B.
Author_Institution :
National Taiwan University
Keywords :
Analytical models; Delay; Doping; MOS devices; Nitrogen; Silicon; Substrates; Temperature; Thin film devices; Transistors;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724755
