A PIN Diode SiGe HBT Variable Gain Amplifier for WCDMA Applications

Author

Gan, Jun-Ning ; Zhang, Wan-Rong ; Xie, Hong-Yun ; Jin, Dong-yue ; Shen, Pei ; Li, Jia ; Huang, Lu ; Huang, Yi-Wen ; Hu, Ning

Author_Institution

Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing

fYear

2009

fDate

27-28 Feb. 2009

Firstpage

593

Lastpage

596

Abstract

We report a novel PIN diode SiGe HBT variable gain amplifier (VGA) suited for the standard of WCDMA. The PIN diode which is employed in the feedback loop of the VGA play as a variable resistor to realize the gain control function. By adjusting the bias of the diode, the gain of the VGA can be changed. An inductor is utilized in the feedback loop to reduce the noise figure of the circuit. After matching the circuit, we get a variable gain amplifier with 21 dB dynamic range, about 19 dB maximum gain, and 2.6 dB minimum noise figure. This work demonstrates a new method controlling the gain by adding a PIN diode in the feedback loop except changing the bias of the transistor.

Keywords

Ge-Si alloys; amplifiers; code division multiple access; heterojunction bipolar transistors; p-i-n diodes; HBT variable gain amplifier; PIN diode; SiGe; WCDMA application; gain control; heterojunction bipolar transistors; inductor; Diodes; Feedback loop; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Multiaccess communication; Noise figure; Resistors; Silicon germanium; PIN; SiGe HBT; Variable Gain Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Communication Software and Networks, 2009. ICCSN '09. International Conference on

Conference_Location

Macau

Print_ISBN

978-0-7695-3522-7

Type

conf

DOI

10.1109/ICCSN.2009.153

Filename

5076921