Title :
Plasmonic signal amplification by monolithically integrated metal-oxide-semiconductor field-effect transistors
Author :
Aihara, Takuma ; Takeda, Akiko ; Fukuhara, Masashi ; Ishii, Y. ; Fukuda, Motohisa
Author_Institution :
Dept. of Electr. & Electron. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
Abstract :
A gold/silicon Schottky-type plasmonic detector was monolithically integrated with two metal-oxide-semiconductor field-effect transistors (MOSFETs) on a silicon substrate. The output current from the detector was amplified 14000 times by using the MOSFETs.
Keywords :
MOSFET; Schottky gate field effect transistors; gold; plasmonics; silicon; Au-Si; MOSFET; Si; gold-silicon Schottky-type plasmonic detector; monolithically integrated metal-oxide-semiconductor field-effect transistors; plasmonic signal amplification; silicon substrate; Detectors; Gold; Logic gates; MOSFET; Plasmons; Silicon; Voltage measurement; MOSFET; Schottky diode; grating; nano-slit; surface plasmon polariton;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656689
