Title :
Stacked Heterostructure Barrier Varactors on InP for Millimeter Wave Triplers
Author :
Krishnamurthi, Kathiravan ; Harrison, Robert G. ; Rogers, Chris ; Ovey, John ; Nilsen, Svein M. ; Missous, Mohammed
Author_Institution :
Dept. of Electronics, Carleton University, Ottawa, KiS 5B6, Canada.
Abstract :
Single-barrier varactors reported earlier were limited in their power output. By using a pseudomorphic In0.52Al0.48As/AlAs/In0.52Al0.48As barrier with good current blocking characteristics and stacking three varactor layers by MBE technique, we report the first symmetric stacked varactor on InP with low leakage, high breakdown voltage (¿ 14V) and 50 mW power output capability at 39 GHz, 20 mW at 186 GHz.
Keywords :
Electrical resistance measurement; Epitaxial layers; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Packaging; Substrates; Varactors; Wet etching;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337302
