Title :
GaAs/InAs quantum dot high efficiency solar cell
Author :
Tian Li ; Bartolo, Robert ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
Near record conversion efficiency for a GaAs/InAs quantum dot solar cell is measured. Detailed measurements of external quantum efficiency are presented. Two different size quantum dots contribute to the generated photocurrent. Record short circuit currents are measured.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; photoemission; semiconductor quantum dots; solar cells; GaAs-InAs; conversion efficiency; external quantum efficiency; photocurrent; quantum dot solar cell; short circuit currents; Coatings; Current measurement; Gallium arsenide; Photonics; Photovoltaic cells; Quantum dots; Short-circuit currents;
Conference_Titel :
Photonics Conference (IPC), 2013 IEEE
Conference_Location :
Bellevue, WA
Print_ISBN :
978-1-4577-1506-8
DOI :
10.1109/IPCon.2013.6656692
