Title :
Optimization of the silicon-based tunnel MIS structures as hot electron injectors
Author :
Grekhov, I.V. ; Shulekin, A.F. ; Vexler, M.I.
Author_Institution :
A.F. Ioffe Phys. Tech. Inst., St. Petersburg, Russia
Abstract :
Hot-electron Auger ionization in Al/tunnel-thin oxide/silicon structures was shown to be used most efficiently in the devices with high n-substrate doping (Nd) and/or relatively large insulator thickness. The structures with high Nd were also found to be quite appropriate for observation of electroluminescence
Keywords :
Auger effect; MIS devices; electroluminescence; hot carriers; tunnelling; Al-SiO2-Si; Al/tunnel-thin oxide/silicon MIS structure; Auger ionization; electroluminescence; hot electron injector; insulator thickness; n-substrate doping; optimization; Current density; Doping; Electroluminescence; Electrons; Insulation; Ionization; Neodymium; Silicon; Thyristors; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557391
