DocumentCode
2119678
Title
A Tunable Lossless HBT Broad-Band Monolithic Microwave Floating Active Inductor
Author
Zanchi, C. ; Parra, T. ; Graffeuil, J.
Author_Institution
LAAS-CNRS and Université Paul Sabatier, 7 av. du Colonel Roche, 31077 Toulouse, France. Tel: (33) 61 33 63 71 ; Fax: (33) 61 33 62 08
Volume
1
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
793
Lastpage
798
Abstract
A monolithic floating Tunable Active Inductor (TAI) based on an Heterojunction Bipolar Transistor design is proposed. This circuit is composed of a common emitter cascode HBT and a feedback common base one. Additionally to its lossless and broad-band characteristics, this HBT active inductor features a voltage controlled tuning capability both for the inductance value and for the operating frequency range. Moreover, a high frequency noise study has been performed and the TAI´s parameters variation versus input power has been evaluated. Simulated frequency tuning range and pushing factor obtained on an active inductor controlled oscillator is presented as an application of this TAI.
Keywords
Active inductors; Circuit noise; Circuit optimization; Feedback circuits; Frequency; Heterojunction bipolar transistors; Inductance; Tunable circuits and devices; Tuning; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337308
Filename
4138353
Link To Document