Title :
Electrical and photoelectrical properties of glassy As2Se3 doped with Mn, Dy and Sm
Author :
Iovu, M. ; Andriesh, A. ; Shutov, S. ; Bulgaru, M. ; Popescu, M. ; Sava, F. ; Lorinczi, A.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Abstract :
The chalcogenide glassy semiconductor As2Se3 doped with Mn, Dy and Sm presents practical interest for optoelectronic devices. Doping by metals influences electrical conductivity and photoelectric characteristics. The conductivity is significantly increased by addition of Mn and Dy impurities. All the dopants hamper the photoconductivity with exception of 0.5 at.% Dy, which generates a broad impurity band in the photoconductivity spectrum near 1.05 eV, ascribed to the presence of a small amount of finely dispersed crystalline phase
Keywords :
arsenic compounds; chalcogenide glasses; deep levels; dysprosium; electrical conductivity; impurity states; manganese; photoconductivity; samarium; semiconductor doping; As2Se3:Dy; As2Se3:Mn; As2Se3:Sm; broad impurity band; chalcogenide glass; electrical conductivity; finely dispersed crystalline phase; impurities; optoelectronic devices; photoconductivity; photoelectric characteristics; semiconductor; Samarium;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557392
