DocumentCode :
2119997
Title :
A New Semi-empirical Model For Amorphous Silicon Thin-film-transistors
Author :
Aoki, Hitoshi ; Khalily, Ebrahim
Author_Institution :
Hewlett Packard Company
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
138
Lastpage :
139
Keywords :
Amorphous silicon; Capacitance; Circuit simulation; Integrated circuit modeling; Intrusion detection; State feedback; Stress; Temperature; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724758
Filename :
724758
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2119997
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