DocumentCode
2119997
Title
A New Semi-empirical Model For Amorphous Silicon Thin-film-transistors
Author
Aoki, Hitoshi ; Khalily, Ebrahim
Author_Institution
Hewlett Packard Company
fYear
1993
fDate
14-15 May 1993
Firstpage
138
Lastpage
139
Keywords
Amorphous silicon; Capacitance; Circuit simulation; Integrated circuit modeling; Intrusion detection; State feedback; Stress; Temperature; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN
0-7803-1338-0
Type
conf
DOI
10.1109/VPAD.1993.724758
Filename
724758
Link To Document