A New Technique for the Field Analysis of Active FET Devices

We describe a new approach to the rigorous electromagnetic analysis of active FET structures. Propagation characteristics, field and current distributions result from the solution of an integral eigenvalue equation of general form applicable to the broad FET family. The model rigorously accounts for conductor and dielectric losses as well as small signal amplification. It is moreover particularly suited to multilayer configurations, as the computational effort does not increase proportionally to the number of layers.