Title :
Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications
Author :
Nawawi, Arie ; Tseng King Jet ; Rusli ; Amaratunga, Gehan A J
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases.
Keywords :
power electronics; power semiconductor diodes; technology CAD (electronics); TCAD Sentaurus platform; diamond-based m-i-p+ diodes; finite element physics-based TCAD Sentaurus software; on-state voltage drop; peak reverse current; power electronic applications; static analysis; switching characteristics; transient analysis; Diamond-like carbon; Gold; Schottky diodes; Temperature; Temperature measurement; Transient analysis;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4577-0542-7
DOI :
10.1109/ECCE.2011.6064127
