Atomistic Modeling of Carbon Co-Implants and Rapid Thermal Anneals in Silicon

Author

Zographos, Nikolas ; Martin-Bragado, Ignacio

Author_Institution

Synopsys Switzerland LLC, Zurich

fYear

2007

fDate

2-5 Oct. 2007

Firstpage

119

Lastpage

122

Abstract

Carbon co-implantation after pre-amorphization implantation is a promising candidate for ultra shallow junction formation for advanced CMOS technologies due to its ability to suppress transient enhanced diffusion of dopants in silicon. Modeling the interaction of carbon with point defects is important for the development of these techniques. In this paper, we demonstrate a comprehensive atomistic model for carbon implantation, diffusion, clustering, and interaction with End-Of-Range (EOR) defects.

Keywords

amorphisation; carbon; diffusion; elemental semiconductors; interstitials; rapid thermal annealing; silicon; Si:C; Si:C - Binary; atomistic modeling; carbon coimplantation; interstitial; point defects; preamorphization; rapid thermal annealing; silicon; transient enhanced diffusion; ultra shallow junction formation; Boron; CMOS technology; Carbon dioxide; Crystallization; Rapid thermal annealing; Rapid thermal processing; Semiconductor device modeling; Semiconductor process modeling; Silicon; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on

Conference_Location

Catania, Sicily

Print_ISBN

978-1-4244-1228-0

Electronic_ISBN

978-1-4244-1228-0

Type

conf

DOI

10.1109/RTP.2007.4383829

Filename

4383829