Atomistic Modeling of Carbon Co-Implants and Rapid Thermal Anneals in Silicon

Carbon co-implantation after pre-amorphization implantation is a promising candidate for ultra shallow junction formation for advanced CMOS technologies due to its ability to suppress transient enhanced diffusion of dopants in silicon. Modeling the interaction of carbon with point defects is important for the development of these techniques. In this paper, we demonstrate a comprehensive atomistic model for carbon implantation, diffusion, clustering, and interaction with End-Of-Range (EOR) defects.