Control of Source and Drain Extension Phosphorus Profile by Using Carbon Co-Implant

Author

Li, C.I. ; Liu, Ron ; Chan, M. ; Hsiao, T.F. ; Yang, C.L. ; Tzou, S.F.

Author_Institution

Div. of Central R&D, United Microelectron. Corp., Tainan

fYear

2007

fDate

2-5 Oct. 2007

Firstpage

127

Lastpage

130

Abstract

Carbon and fluorine co-implantation have shown encouraging junction formation improvement, especially for P-type junctions. Nevertheless, no obvious improvement is found for arsenic implants. In this paper, phosphorous with different co-implants shows that C co-implant can effectively suppress phosphorous diffusion. With C co-implant, the junction depth decreased 42% at low temperature RTP combined with laser annealing. We implemented L18 DOE experiment with germanium, carbon, phosphorous and RTP splits, and the result shows that the dominant factors are phosphorous dosage and RTP temperature. The best Rs*Xj performance can meet 45 nm requirement.

Keywords

germanium; ion implantation; laser beam annealing; phosphorus; rapid thermal processing; Ge; Ge - Element; L18 DOE experiment; P; P - Element; carbon co-implantation; drain extension; fluorine co-implantation; germanium; junction formation; laser annealing; p-type junctions; phosphorous; phosphorus profile; rapid thermal processing; source extension; Annealing; Atomic layer deposition; Atomic measurements; Centralized control; Electrical resistance measurement; Implants; Microelectronics; Solids; Temperature; US Department of Energy; Carbon; LSA; Phosphorous; co-implantation; ultra shallow junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on

Conference_Location

Catania, Sicily

Print_ISBN

978-1-4244-1227-3

Electronic_ISBN

978-1-4244-1228-0

Type

conf

DOI

10.1109/RTP.2007.4383831

Filename

4383831