Title :
Light and heavy charge carrier caused breakdown of silicon p-n junction
Author_Institution :
Lab. of Semicond. Phys., Riga Tech. Univ., Latvia
Abstract :
The initiation of impact ionisation is known to come mostly from light charge carriers. Transition from avalanche breakdown to thermoelectric breakdown, i.e., transition from light to heavy charge carrier caused breakdown is analysed in several microplasmas with increase in ambient temperature. Transition from light to heavy charge carrier caused secondary breakdown at increase current is analysed
Keywords :
avalanche breakdown; elemental semiconductors; impact ionisation; p-n junctions; semiconductor plasma; silicon; thermoelectricity; Si; avalanche breakdown; heavy charge carriers; impact ionisation; light charge carriers; microplasma; secondary breakdown; silicon p-n junction; thermoelectric breakdown; Avalanche breakdown; Charge carrier processes; Charge carriers; Electric breakdown; Electrons; Impact ionization; P-n junctions; Silicon; Temperature; Thermoelectricity;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557394
