DocumentCode
2120530
Title
Intermediate band to conduction band optical absorption in ZnTe:O
Author
Antolin, E. ; Chen, Ci ; Ramiro, I. ; Foley, J. ; Lopez, Enrique ; Artacho, I. ; Hwang, Jae-Sang ; Teran, Alan ; Hernandez, E. ; Tablero, C. ; Marti, A. ; Phillips, J.D. ; Luque, Antonio
Author_Institution
Instituto de Energía Solar, Universidad Politécnica de Madrid, Spain
fYear
2012
fDate
3-8 June 2012
Firstpage
1
Lastpage
5
Abstract
ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work we present the first measurement of the absorption coefficient associated to transitions from the IB to the conduction band (CB) in ZnTe:O.
Keywords
Absorption; Gallium arsenide; Optical reflection; Optical variables measurement; Reflectivity; Substrates; Temperature measurement; high - efficiency solar cells; infrared absorption; intermediate band solar cells; novel photovoltaic concepts;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
Conference_Location
Austin, TX, USA
Type
conf
DOI
10.1109/PVSC-Vol2.2012.6656727
Filename
6656727
Link To Document