DocumentCode :
2120530
Title :
Intermediate band to conduction band optical absorption in ZnTe:O
Author :
Antolin, E. ; Chen, Ci ; Ramiro, I. ; Foley, J. ; Lopez, Enrique ; Artacho, I. ; Hwang, Jae-Sang ; Teran, Alan ; Hernandez, E. ; Tablero, C. ; Marti, A. ; Phillips, J.D. ; Luque, Antonio
Author_Institution :
Instituto de Energía Solar, Universidad Politécnica de Madrid, Spain
fYear :
2012
fDate :
3-8 June 2012
Firstpage :
1
Lastpage :
5
Abstract :
ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work we present the first measurement of the absorption coefficient associated to transitions from the IB to the conduction band (CB) in ZnTe:O.
Keywords :
Absorption; Gallium arsenide; Optical reflection; Optical variables measurement; Reflectivity; Substrates; Temperature measurement; high - efficiency solar cells; infrared absorption; intermediate band solar cells; novel photovoltaic concepts;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th
Conference_Location :
Austin, TX, USA
Type :
conf
DOI :
10.1109/PVSC-Vol2.2012.6656727
Filename :
6656727
Link To Document :
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