Surface off-stoichiometry of CuInS2 thin-film solar cell absorbers

Author

Bar, Marcus ; Klaer, Joachim ; Felix, Roberto ; Barreau, Nicolas ; Weinhardt, Lothar ; Wilks, Regan G. ; Heske, Clemens ; Schock, Hans-Werner

Author_Institution

Solar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109, Germany

fYear

2012

fDate

3-8 June 2012

Firstpage

1

Lastpage

5

Abstract

X-ray photoelectron and x-ray-excited Auger electron spectroscopy was used to investigate the chemical surface structure of CuInS2 thin-film solar cell absorbers. We find that the [In]/[Cu] surface composition can vary between 1.6 (± 0.4) and 3.7 (± 0.7), depending on relatively minor variations in the absorber formation process and/or whether additional wet-chemical treatments are performed. These variations are primarily due to differences in the Cu surface concentration. The corresponding change of the modified In Auger parameter is interpreted as being indicative for a change of the chemical environment of In as a function of Cu off-stoichiometry.

Keywords

Annealing; Chemicals; Copper; Indexes; Spectroscopy; Surface treatment; chalcopyrite thin-film solar cell; surface composition; wet-chemical treatment; x-ray photoelectron spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th

Conference_Location

Austin, TX, USA

Type

conf

DOI

10.1109/PVSC-Vol2.2012.6656728

Filename

6656728