Anomalous high sensitivity high capacitance nano-structure incorporated interdigital sensors

High sensitivity, interdigital structures are realized on silicon substrates where the incorporation of silicon-based nano structures on the vertical planes of fingers leads to a significant increase in the measured capacitance of the device. Such structure shows a high sensitivity to inclination and accelerations, due to a field emission of electron from nano metric features. A preliminary model for the capacitance and its dependence on the measurement voltage is presented.