Title :
Physics-Based Modeling of Power Converters From Finite Element Electromagnetic Field Computations
Author :
Nejadpak, Arash ; Mohammed, Osama A.
Author_Institution :
Electr. & Comput. Eng. Dept., Florida Int. Univ., Miami, FL, USA
Abstract :
In this paper, a physics-based high-frequency (HF) model of switching power converters including the insulated gate bipolar transistor (IGBT) unit cells, heat sink, and connective printed circuit board (PCB) traces combined in a single electrical circuit is presented. The IGBT model includes the HF stray components superimposed on the well-known Hefner IGBT model. The HF components were calculated using a 3-D quasi-static finite element (3-D FE) analysis. The proposed complex model of the IGBT was verified both numerically and experimentally at different switching frequencies. The computed IGBT model was used in a low-high frequency model of a motor-drive system, and the common mode ground current was experimentally verified showing excellent results.
Keywords :
electromagnetic compatibility; finite element analysis; insulated gate bipolar transistors; motor drives; power semiconductor switches; printed circuits; switching convertors; 3D FE analysis; 3D quasi-static finite element; HF model; Hefner IGBT model; PCB traces; common mode ground current; electrical circuit; finite element electromagnetic field computations; heat sink; insulated gate bipolar transistor; low-high frequency model; motor-drive system; physics-based high-frequency model; printed circuit board; switching frequencies; switching power converters; Analytical models; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; Mathematical model; Semiconductor device modeling; Switches; Electromagnetic interference (EMI); electromagnetic compatibility (EMC); finite elements; high-frequency (HF) modeling; power semiconductor switches;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2012.2206046
