Title :
Dependence of the noise resistance of microwave FET´s from the device characteristics
Author :
Caddemi, A. ; Prima, F. Di ; Sannino, M.
Author_Institution :
Dipt. di Ingegneria Elettrica, Palermo Univ., Italy
Abstract :
The noise parameters F0, Γ0 and rn are a complete representation of the noise performance of any linear twoport. We focus upon rn which is a measure of the noise figure degradation when the source reflection coefficient departs from the optimum value Γ0. In the present paper, the behaviour of rn is analysed as a function of the main elements of the noisy electrical model which reproduces the device performance. Such a study is aimed at evidencing the factors which allow for decreasing either the values and the frequency-dependence of rn . By optimizing rn, great improvements can be obtained in the performance of broad-band microwave low-noise amplifiers
Keywords :
microwave field effect transistors; semiconductor device models; semiconductor device noise; broadband microwave low-noise amplifier; electrical model; frequency dependence; linear two-port; microwave FET; noise figure; noise parameter; noise resistance; reflection coefficient; Circuit noise; Electric variables measurement; Frequency; Microwave FETs; Microwave devices; Noise figure; Noise shaping; Performance evaluation; Positron emission tomography; Temperature;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651199
