DocumentCode :
2120889
Title :
Laser Annealing of Power Devices
Author :
Friedrich, Detlef ; Bernt, Helmut ; Hanssen, Henning ; Oesterlin, Peter ; Schmidt, Henning
Author_Institution :
Fraunhofer Inst. for Silicon Technol., Itzehoe
fYear :
2007
fDate :
2-5 Oct. 2007
Firstpage :
263
Lastpage :
269
Abstract :
The discrete IGBT (Insulated Gate Bipolar Transistor) is the most important power semiconductor device for power conversion and control in the medium power range with voltages >400 V. Next generation IGBTs require low thermal budget p-n junction formation for the back side field stop and emitter layer. The requirement for the limited thermal budget is due to the fact that the front side metallization does not allow high temperature treatment for the activation of the field stop layer. Therefore, laser annealing experiments have been carried out using a frequency doubled Yb:YAG laser at a wavelength of 515 nm with an energy density up to 4 J/cm2. In order to find out appropriate process conditions for a single step Boron and Phosphorous laser annealing process, parameters for ion implantation as well as energy density and pulse duration of the laser have been varied. The doping profiles of Boron and Phosphorous were measured by Secondary Ion Mass Spectroscopy (SIMS) and Spreading Resistance Probe (SRP) in order to assess the dopant activation behaviour. The main interest was the activation of the Phosphorous doped field stop layer in a depth range of 1 mum. A strong dependency of Phosphorous activation on implanted Boron dose was observed with dopant activation up to 70%.
Keywords :
boron; doping profiles; insulated gate bipolar transistors; laser beam annealing; phosphorus; power bipolar transistors; secondary ion mass spectra; Si:B; Si:P; dopant activation; frequency doubled Yb:YAG laser; insulated gate bipolar transistor; phosphorous doped field stop layer; power devices; secondary ion mass spectroscopy; single step boron laser annealing; single step phosphorous laser annealing; spreading resistance probe; wavelength 515 nm; Annealing; Boron; Insulated gate bipolar transistors; Metallization; P-n junctions; Power conversion; Power lasers; Power semiconductor devices; Semiconductor lasers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on
Conference_Location :
Catania, Sicily
Print_ISBN :
978-1-4244-1227-3
Electronic_ISBN :
978-1-4244-1228-0
Type :
conf
DOI :
10.1109/RTP.2007.4383852
Filename :
4383852
Link To Document :
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