Effect of Low Temperature Annealing Prior to Non-melt Laser Annealing in Ultra-shallow Junction Formation

Author

Fukaya, Takeshi ; Yamada, Ryota ; Tanaka, Yuichi ; Matsumoto, Shinichi ; Suzuki, Takumi

Author_Institution

Keio Univ., Yokohama

fYear

2007

fDate

2-5 Oct. 2007

Firstpage

317

Lastpage

320

Abstract

Non-melt laser annealing has been investigated intensively to form ultra-shallow junction. Particularly, effect of low temperature annealing prior to non-melt laser annealing was studied. It is found that the leakage current under reverse bias of p⁺/n diodes was decreased by about two orders of magnitude in low temperature pre-annealing / laser annealing sample as compared with that of laser annealing sample. Improvement of crystallinity of implanted layer was also confirmed from cross sectional transmission electron microscopy in low temperature pre-annealing / laser annealing sample.

Keywords

amorphisation; crystallisation; elemental semiconductors; germanium; laser beam annealing; leakage currents; p-n junctions; semiconductor diodes; silicon; transmission electron microscopy; Si-Ge; Si-Ge - Interface; cross sectional transmission electron microscopy; crystallinity; germanium pre-amorphization implant; implanted layer; leakage current; n-type silicon(100) wafers; nonmelt laser annealing; p-n diodes; reverse bias; ultrashallow junction; Annealing; Atomic force microscopy; Crystallization; Diodes; Implants; Laser noise; Leakage current; Optical pulses; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2007. RTP 2007. 15th International Conference on

Conference_Location

Catania, Sicily

Print_ISBN

978-1-4244-1228-0

Electronic_ISBN

978-1-4244-1228-0

Type

conf

DOI

10.1109/RTP.2007.4383860

Filename

4383860