DocumentCode :
2121082
Title :
Modeling And Simulation Of Anomalous Degradation Of Subb-um NMOS´s Current-driving Due To Velocity-saturation Effect
Author :
Tsuneno, Katsumi ; Sato, Hisako ; Masuda, Hiroo
Author_Institution :
Hitachi, Ltd.
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
152
Lastpage :
153
Keywords :
Boundary conditions; CMOS technology; Degradation; Equations; Intrusion detection; MOS devices; MOSFETs; Predictive models; Semiconductor device modeling; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724765
Filename :
724765
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2121082
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