• DocumentCode
    2121144
  • Title

    A Study Of Injection Conditions In The Substrate Hot Electron Induced Degradation Of n-MOSFETs

  • Author

    Selmi, L. ; Fiegna, C. ; Sangiorgi, E. ; Bez, R. ; Ricco, B.

  • Author_Institution
    DEIS
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    156
  • Lastpage
    157
  • Keywords
    Current measurement; Degradation; Electron traps; Energy barrier; Energy measurement; MOSFET circuits; Semiconductor process modeling; Silicon; Substrate hot electron injection; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724767
  • Filename
    724767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2121144