DocumentCode :
2121144
Title :
A Study Of Injection Conditions In The Substrate Hot Electron Induced Degradation Of n-MOSFETs
Author :
Selmi, L. ; Fiegna, C. ; Sangiorgi, E. ; Bez, R. ; Ricco, B.
Author_Institution :
DEIS
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
156
Lastpage :
157
Keywords :
Current measurement; Degradation; Electron traps; Energy barrier; Energy measurement; MOSFET circuits; Semiconductor process modeling; Silicon; Substrate hot electron injection; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724767
Filename :
724767
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2121144
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