Title :
Energy Broadening Associated With Finite Collision Duration In Hot Carrier Transport In Semiconductors
Author_Institution :
NTT LSI Laboratories
Keywords :
Approximation methods; Electrons; Equations; Fabrication; Hot carriers; Kinetic theory; Laboratories; Large scale integration; Phonons; Scattering;
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
DOI :
10.1109/VPAD.1993.724770
