DocumentCode :
2121252
Title :
A Simple Hot Electron Transport Model And Its Prediction Of Si-SiO2 Injection Probability
Author :
Jin, Gyo-young ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Seoul Nat. Univ.
fYear :
1993
fDate :
14-15 May 1993
Firstpage :
166
Lastpage :
167
Keywords :
Electromagnetic scattering; Electron emission; Electron mobility; Impact ionization; Network address translation; Particle scattering; Phonons; Predictive models; Probability; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
Print_ISBN :
0-7803-1338-0
Type :
conf
DOI :
10.1109/VPAD.1993.724771
Filename :
724771
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2121252
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