DocumentCode

2121279

Title

Efficient Deep-submicron Flash-EPROM Device Simulation Using Energy Transport Model

Author

Peng, Jack ZZ ; Longeor, S. ; Frey, Jeffrey

Author_Institution

Advanced Micro Devices

fYear

1993

fDate

14-15 May 1993

Firstpage

168

Lastpage

169

Keywords

Capacitors; Design optimization; EPROM; Educational institutions; Impact ionization; Lifting equipment; Nonvolatile memory; Steady-state; Sun; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN

0-7803-1338-0

Type

conf

DOI

10.1109/VPAD.1993.724772

Filename

724772