Title :
High Efficiency and Power Ion Implanted MESFET Devices
Author :
Bastida, E.M. ; Antolini, P. ; Castelli, A. ; Donzelli, G.P. ; Gabbrielli, B. ; Longari, C. ; Rasà, F. ; Scopelliti, L.
Author_Institution :
ALCATEL TELETTRA, Via Trento 30, 20059 Vimercate, MI, Italy.
Abstract :
The paper describes how through proper new process features power FET devices with surprisingly increased power and efficiency have been recently produced. In particular the power added efficiency reach values higher than those expected from standard literature relationships. The reasons of this fact are discussed.
Keywords :
Annealing; FETs; Fabrication; Frequency; MESFETs; Ohmic contacts; Power measurement; Surface treatment; Transconductance; Voltage control;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337366
