مرکز منطقه ای اطلاع رساني علوم و فناوري - Theoretical Analysis Of Transconductance Enhancement Due To Electron Concentration Dependent Screening In Heavily Doped Systems

DocumentCode :

2121328

Title :

Theoretical Analysis Of Transconductance Enhancement Due To Electron Concentration Dependent Screening In Heavily Doped Systems

Author :

Ho, Shirun ; Moriyoshi, Aya ; Ohubu, Isao ; Kagaya, Osamu ; Mizuta, Hiroshi ; Yamaguchi, Ken

Author_Institution :

Hitachi Ltd.

fYear :

1993

fDate :

14-15 May 1993

Firstpage :

174

Lastpage :

175

Keywords :

Conductivity; Degradation; Doping; Electron mobility; Gallium arsenide; Impurities; Laboratories; Particle scattering; Transconductance; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

Print_ISBN :

0-7803-1338-0

Type :

conf

DOI :

10.1109/VPAD.1993.724775

Filename :

724775

Link To Document :