• DocumentCode
    2121396
  • Title

    Unified Set Of Models For Minority Carrier Transport Parameters In Heavily Doped Monosilicon And Polysilicon

  • Author

    Johnson, Molly ; Strojwas, Andrzej J. ; Greve, David W.

  • Author_Institution
    Carnegie Mellon University
  • fYear
    1993
  • fDate
    14-15 May 1993
  • Firstpage
    178
  • Lastpage
    179
  • Keywords
    Doping; Electron mobility; Grain boundaries; Microstructure; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Temperature dependence; Virtual manufacturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on
  • Print_ISBN
    0-7803-1338-0
  • Type

    conf

  • DOI
    10.1109/VPAD.1993.724777
  • Filename
    724777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2121396