2121396

Unified Set Of Models For Minority Carrier Transport Parameters In Heavily Doped Monosilicon And Polysilicon

Johnson, Molly ; Strojwas, Andrzej J. ; Greve, David W.

Carnegie Mellon University

1993

14-15 May 1993

178

179

Doping; Electron mobility; Grain boundaries; Microstructure; Photonic band gap; Predictive models; Semiconductor process modeling; Silicon; Temperature dependence; Virtual manufacturing;

English

ieee

VLSI Process and Device Modeling, 1993. (1993 VPAD) 1993 International Workshop on

0-7803-1338-0

conf

10.1109/VPAD.1993.724777

724777