Title :
500 °C Bipolar SiC Linear Voltage Regulator
Author :
Kargarrazi, Saleh ; Lanni, Luigia ; Saggini, Stefano ; Rusu, Ana ; Zetterling, Carl-Mikael
Author_Institution :
Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Stockholm, Sweden
Abstract :
In this paper, we demonstrate a fully integrated linear voltage regulator in silicon carbide NPN bipolar transistor technology, operational from 25°C up to 500°C. For 15-mA load current, this regulator provides a stable output voltage with <;2% variation in the temperature range 25°C-500°C. For both line and load regulations, degradation of 50% from 25°C to 300°C and improvement of 50% from 300°C to 500°C are observed. The transient response measurements of the regulator show robust behavior in the temperature range 25°C-500°C.
Keywords :
bipolar transistors; silicon compounds; voltage regulators; wide band gap semiconductors; SiC; bipolar linear voltage regulator; bipolar transistor technology; current 15 mA; temperature 25 degC to 500 degC; transient response measurements; Regulators; Resistors; Silicon carbide; Temperature distribution; Temperature measurement; Voltage control; Voltage measurement; Bipolar junction transistor (BJT); high-temperature IC; regulators; silicon carbide (SiC); silicon carbide (SiC).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2417097
