DocumentCode
2121762
Title
The design, fabrication and characterization of a piezoresistive tactile sensor for fingerprint sensing
Author
Zhou, Zhijian ; Wong, Man ; Rufer, Libor
Author_Institution
Dept. of Electron. & Comput. Eng., HKUST, Hong Kong, China
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
2589
Lastpage
2592
Abstract
Presently reported are the design, fabrication and characterization of a diaphragm-based piezoresistive tactile sensor for fingerprint sensing. A dimpled diaphragm was constructed using low-pressure chemical-vapor deposited (LPCVD) low-stress silicon nitride. A sacrificial double-layer, consisting of amorphous silicon and silicon oxide, was used to form a shallow cavity underneath the diaphragm. The depth of the cavity was designed to provide sufficient damping to eliminate oscillation of the diaphragm and made shallow to prevent damage to the diaphragm when excessively loaded. Metal-induced laterally-crystallized polycrystalline silicon (poly Si), having a gauge factor larger than that of conventional LPCVD poly-Si, was used to construct the piezo-resistors. A static response of ~0.1μV/V/Pa was measured for a 100×100μm2 square diaphragm, sufficient to produce an output signal in the milli-volt range under a typical finger-induced pressure loading of 0.2 to 2.5 MPa.
Keywords
chemical vapour deposition; piezoresistive devices; resistors; silicon compounds; tactile sensors; Si; SiN; SiO; diaphragm-based piezoresistive tactile sensor; finger-induced pressure loading; fingerprint sensing; gauge factor; low-pressure chemical-vapor deposition; metal-induced laterally-crystallized polycrystalline silicon; oscillation eliminate; pressure 0.2 MPa to 2.5 MPa; shallow cavity; square diaphragm;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690176
Filename
5690176
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