Title :
Two-dimensional device simulation of polysilicon thin film transistors
Author :
Deng, Wanling ; Huang, Junkai ; Chen, Sunwen
Author_Institution :
Dept. of Electron. Eng., Jinan Univ., Guangzhou, China
Abstract :
Electrical characteristics of polysilicon thin-film transistors (poly-Si TFTs) are strongly affected by density of trap states in the energy bandgap. Based on the single exponential deep state density, two-dimensional simulation is used to construct an n-channel poly-Si TFT and simulate its DC and AC characteristics. Subthreshold swing, threshold voltage and gate capacitances are included. Compact models are derived that can describe the unique behaviors of the aforementioned parameters based on the observation of simulation results.
Keywords :
elemental semiconductors; silicon; thin film transistors; AC characteristics; DC characteristics; Si; density of trap state; electrical characteristics; energy bandgap; gate capacitance; n-channel poly-Si TFT; polysilicon thin film transistor; single exponential deep state density; subthreshold swing; two-dimensional device simulation; Capacitance; Films; Integrated circuit modeling; Logic gates; Simulation; Thin film transistors; Threshold voltage; gate capacitance; polysilicon thin-film transistors; subthreshold swing; threshold voltage; two-dimensional simulation;
Conference_Titel :
Consumer Electronics, Communications and Networks (CECNet), 2012 2nd International Conference on
Conference_Location :
Yichang
Print_ISBN :
978-1-4577-1414-6
DOI :
10.1109/CECNet.2012.6201804
