Comparisons of different control strategies for 20kVA solid state transformer

This paper presents and compares different control strategies for 20 kVA silicon IGBT based solid state transformer (SST). The SST has a cascaded seven level rectifier stage, three output parallel Dual Active Bridge (DAB) DC/DC stage and an inverter stage. The voltage of the three high voltage capacitors must be balanced for the safe operation of the IGBTs, however, the mismatch of power devices parameters and variance of high frequency transformer leakage inductance of the DAB stage will cause voltage unbalance for these capacitors as well as the power unbalance of the three output parallel DAB stages. This paper analyzed these effects and discussed the limitations and merits for several different control strategies. The newly proposed control strategy for the SST has been determined as the most suitable strategy in terms of performance and simplicity. Simulation and experiment results are presented to validate the analysis.