Title :
InP HBT and HEMT technology and applications
Author :
Oki, A.K. ; Streit, D.C. ; Lai, R. ; Gutierrez-Aitken, A. ; Chen, Y.C. ; Grundbacher, R. ; Grossman, P.C. ; Block, T. ; Chin, P. ; Barsky, M. ; Sawdai, D. ; Wojtowicz, M. ; Kaneshiro, E. ; Yen, H.C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The performance and cost advantages of gallium arsenide (GaAs) based heterojunction bipolar transistor (HBT) and high electron mobility transistor (HEMT) technology has enabled several high volume commercial applications. TRW is currently delivering over 4 million MBE based GaAs HBT and HEMT integrated circuits per month for several commercial applications, as well as for high performance high reliability defense avionics, ground, and space applications. Indium phosphide (InP) based technologies have several enabling advantages over GaAs technologies for commercial communication applications, in particular for high efficiency mobile cellular, broadband millimeter wave point-to-point links, high speed fiber-optics, and satellite telecommunications
Keywords :
HEMT integrated circuits; III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; HBT; HEMT; InP; MBE; commercial communication applications; indium phosphide; integrated circuit technology; Aerospace electronics; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; MODFETs; Millimeter wave technology; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850216
