III-V materials integration technologies: wafer bonding approaches

Author

Gosele, U. ; Tong, Q.-Y.

Author_Institution

Max-Planck-Inst. of Microstruct. Phys., Halle, Germany

fYear

2000

fDate

2000

Firstpage

9

Lastpage

12

Abstract

Integration of III-V materials with either other III-V materials or with different materials such as silicon has become of increasing technological importance. Wafer bonding approaches will be discussed including bonding and thinning procedures with a special emphasis on hydrogen-implantation induced layer transfer (`smart-cut\´). A wafer level technology developed at Research Triangle Institute will be described involving double-side processed 3" InP device layers using symmetrical intrinsic hetero-bipolar transistor (SIHBT) integrated circuits

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; ion implantation; wafer bonding; 3 in; III-V material; InP; Smart-Cut; hydrogen implantation; integration technology; symmetrical intrinsic hetero-bipolar transistor integrated circuit; wafer bonding; wafer thinning; Bonding forces; Crystalline materials; Crystallization; III-V semiconductor materials; Integrated circuit technology; Silicon; Substrates; Surface cleaning; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850217

Filename

850217