Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications

Author

Hamacher, M. ; Kaiser, R. ; Heidrich, H. ; Albrecht, P. ; Borchert, B. ; Janiak, K. ; Löffler, R. ; Malchow, S. ; Rehbein, W. ; Schroeter-Janßen, H.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

2000

fDate

2000

Firstpage

21

Lastpage

24

Abstract

This paper reports on 1.3 μm complex coupled DFB lasers, 1.55 μm (wavelength selective) photodiodes and passive spot size converters integrated with Y-shaped waveguide structures on InP, developed for further monolithic integration purposes. The characteristics of such IC subintegrations are similar to those of comparable, separately fabricated devices. Results on first somewhat more complex monolithic Y-junction 1.3 μm/1.5 μm transmitter/receiver ICs are presented

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodiodes; transceivers; 1.3 micron; 1.55 micron; GaInAsP-InP; GaInAsP/InP photonic IC; complex coupled DFB laser; monolithic integration; optical transceiver; spot size converter; waveguide Y-junction; wavelength selective photodiode; Indium phosphide; Monolithic integrated circuits; Optical crosstalk; Optical device fabrication; Optical receivers; Optical transmitters; Optical waveguides; Photodiodes; Waveguide lasers; Wavelength converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850220

Filename

850220