Title :
High performance mode field converter GaInAsP laser integrated with improved butt-coupled passive waveguide
Author :
Mukaihara, T. ; Kurobe, T. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We have demonstrated integration of mode field converter (MFC) GaInAsP laser with butt-coupled passive waveguide. High coupling efficiency of 96% at the butt-junction was achieved using an improved SiN mask for selective MOCVD growth. Threshold current as low as 2.2 mA and vertical beam divergence as narrow as 12° could be achieved. This integrated laser is very promising candidate for coming optical module in low power consumption and low cost optical network systems
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical couplers; semiconductor lasers; 2.2 mA; 96 percent; GaInAsP; SiN; SiN mask; beam divergence; butt coupled passive waveguide; mode field converter GaInAsP laser; monolithic integration; optical module; selective MOCVD growth; threshold current; Integrated optics; Laser beams; Laser modes; MOCVD; Optical fiber networks; Optical waveguides; Power lasers; Silicon compounds; Threshold current; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850222
