Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy

Author

Zheng, Haiqun ; Radhakrishnan, K. ; Wang, Hong ; Yuan, Kaihua ; Yoon, Soon Fatt ; Ng, Geok Ing

Author_Institution

Microelectron. Centre, Nanyang Technol. Univ., Singapore

fYear

2000

fDate

2000

Firstpage

41

Lastpage

44

Abstract

We report, for the first time, metamorphic InP/InGaAs double-heterojunction bipolar transistor (DHBT) structures grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). A linearly graded In_xGa_1-xP(x:0.48 to 1) buffer layer was used to accommodate the strain relaxation. Mesa-type devices were fabricated and characterized. The devices show promising DC and RF performances, indicating the great potential for SSMBE growth of metamorphic InP/InGaAs HBT structures for high speed and high frequency applications

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; GaAs; GaAs substrate; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; buffer layer; mesa-type device; metamorphic structure; solid source molecular beam epitaxy; strain relaxation; Bipolar transistors; Buffer layers; Capacitive sensors; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850225

Filename

850225