Title :
LP-MOVPE growth of DHBT structure with heavily Zn-doped base and suppressed outdiffusion
Author :
Gini, E. ; Bauknecht, R. ; Rohner, M. ; Schnyder, I. ; Melchior, H.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Low pressure MOVPE growth of layer structures for high performance double hetero bipolar transistors (DHBT) is presented. A very high zinc base doping level of 3.5×1019/cm3 was obtained at a growth temperature of 490°C. Zinc outdiffusion was avoided by growth interruptions. The layer structure included a step graded base collector heterojunction. Fabricated DHBT´s showed β=70, fT=115 GHz, fmax=170 GHz, and BVCE0=10 V
Keywords :
III-V semiconductors; diffusion; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; zinc; 490 C; InP DHBT; InP:Zn; double heterojunction bipolar transistor; growth interruption; heavily zinc doped base; layer structure; low pressure MOVPE growth; outdiffusion; step graded base collector heterojunction; Doping; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Lattices; Temperature; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850226
