Title :
Characterization of InP using metal-insulator-semiconductor-tunneling microscopy (MISTM)
Author :
Richter, S. ; Garno, J.P. ; Geva, M. ; Kleiman, R.N.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
Metal-Insulator-Semiconductor Tunneling Microscopy is a new technique for creating a 2 dimensional map of the carrier concentration in a semiconductor. This is done by measuring the tunneling current between a conducting Atomic Force Microscope tip and a semiconductor sample. Here we present the application of this method to InP. By exploring the current voltage characteristics of p- and n-type InP over a large range of voltages and carrier concentrations we find they are well-described by Metal-Insulator-Semiconductor theory. A fitting procedure of this model to the data gave a maximum deviation of 5%
Keywords :
III-V semiconductors; MIS devices; atomic force microscopy; carrier density; indium compounds; InP; atomic force microscopy; carrier concentration; current-voltage characteristics; indium phosphide; metal-insulator-semiconductor tunneling microscopy; semiconductor material; two-dimensional imaging; Atomic force microscopy; Atomic measurements; Current measurement; Electrical resistance measurement; Force measurement; III-V semiconductor materials; Indium phosphide; Metal-insulator structures; Tunneling; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850231
