Title :
A study of the influence of the substrate and epilayers on the InP HEMT gate current
Author :
Aupetit-Berthelemot, C. ; Dubois, A. ; Ladner-Marcoux, C. ; Decobert, J. ; Dumas, J.M.
Author_Institution :
ENSIL, Limoges Univ., France
Abstract :
The excess gate current usually measured on InP HEMT structures is mainly due to an impact ionization mechanism developing in the InGaAs channel. Recent investigations noted on the presence of a second ionization mechanism near pinch-off condition. In this communication we report studies on both mechanisms. We verified that the first one is effectively due to InGaAs channel, depending on the gate-to-drain distance. The second one is more complex to investigate. From our experiments, a contribution of the substrate/buffer layer interface is postulated. Holes are injected toward this interface
Keywords :
III-V semiconductors; high electron mobility transistors; impact ionisation; indium compounds; semiconductor epitaxial layers; InGaAs channel; InP; InP HEMT; epilayer; gate current; hole injection; impact ionization; ionization mechanism; pinch-off; substrate/buffer layer interface; Buffer layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Optical fiber communication; Optical receivers; Temperature; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850233
