Title :
Stress-related hydrogen degradation of 0.1 μm InP HEMTs and GaAs PHEMTs
Author :
Blanchard, R.R. ; del Alamo, J.A.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
Abstract :
Hydrogen degradation of III-V FETs is a serious reliability concern. Previous work has shown that threshold voltage shifts induced by H2 exposure in 1 μm-channel InP HEMTs can be attributed to compressive stress in the gate due to the formation of TiHx in Ti/Pt/Au gates. The compressive stress affects the device characteristics through the piezoelectric effect. The present work examined the H2 sensitivity of 0.1 μm strained-channel InP HEMTs and GaAs PHEMTs. After exposure to H2 , the threshold voltage, VT, of both types of devices shifted positive. In situ VT measurements reveal that the V T shifts show very distinctive time dependencies that are consistent with stress-related phenomena
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; 0.1 micron; GaAs; GaAs PHEMT; H2; III-V FET; InP; InP HEMT; Ti/Pt/Au gate; compressive stress; hydrogen degradation; piezoelectric effect; threshold voltage; Compressive stress; Degradation; FETs; Gallium arsenide; HEMTs; Hydrogen; III-V semiconductor materials; Indium phosphide; MODFETs; Threshold voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850235
