Title :
Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier
Author :
Kashif, A. ; Azam, Saad ; Hayat, K. ; Imran, Muhammad
Author_Institution :
Centre of Excellence in Sci. & Appl. Technol. (CESAT), Islamabad, Pakistan
Abstract :
Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.
Keywords :
integrated circuit design; power amplifiers; technology CAD (electronics); wideband amplifiers; CLP analysis; RF-LDMOS; TCAD; broadband power amplifier; class AB PA; computational load-pull analysis; frequency 1.9 GHz to 2.5 GHz; output matching network; power amplifier design; technology computer aided design; Computational modeling; Europe; Heterojunction bipolar transistors; Impedance; Integrated circuit modeling; LC network; Power amplifier; Si-LDMOS; load-pull; time-domain analysis;
Conference_Titel :
Applied Sciences and Technology (IBCAST), 2013 10th International Bhurban Conference on
Conference_Location :
Islamabad
Print_ISBN :
978-1-4673-4425-8
DOI :
10.1109/IBCAST.2013.6512185
