Title :
An inverted delta-doped V-shaped InGaP/InxGa1-x As pseudomorphic high electron mobility transistor
Author :
Yu, K.H. ; Liu, W.C. ; Chang, W.L. ; Lin, Kawuu W. ; Lin, K.W. ; Yen, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
We have presented a high-performance InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor (PHEMT) in this work. Due to the presence of inverted delta-doped V-shaped InGaP/InxGa1-xAs structure, the good carrier confinement together with high-breakdown voltage and a flat and wide transconductance operation regime are expected. Experimentally, the fabricated device (1×100 μm2 ) shows a high gate-to-drain breakdown voltage of 30 V and a high output drain saturation current density of 826 mA/mm at VGS=2.5 V. The high transconductance expands over a very broad operation range with the maximum value of 201 mS/mm. Meanwhile, the studied device exhibits a good microwave frequency linearity
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; InGaP-InGaAs; InGaP/InxGa1-xAs pseudomorphic high electron mobility transistor; breakdown voltage; carrier confinement; inverted delta-doped V-shaped channel structure; microwave frequency linearity; saturation current density; transconductance; Carrier confinement; Current density; Electron mobility; HEMTs; Linearity; MODFETs; Microwave frequencies; PHEMTs; Transconductance; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850239
