Title :
In0.49Ga0.51/GaAs superlatticed resonant-tunneling transistor (SRTT)
Author :
Cheng, Shiou-Ying
Author_Institution :
Dept. of Electr. Eng., Oriental Inst. of Technol., Taipei, Taiwan
Abstract :
In this presentation, we have fabricated and demonstrated a new InGaP/GaAs SRTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained
Keywords :
Gallium arsenide; Gallium compounds; III-V semiconductors; Indium compounds; Negative resistance devices; Resonant tunneling transistors; Semiconductor superlattices; In0.49Ga0.51-GaAs; In0.49Ga0.51/GaAs superlattice resonant tunneling transistor; N-shaped negative differential resistance; current gain; hole confinement barrier; injection efficiency; three-terminal device; Bipolar transistors; Carrier confinement; Chemical vapor deposition; Gallium arsenide; MOCVD; Molecular beam epitaxial growth; Organic chemicals; Resonant tunneling devices; Superlattices; Temperature control;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850240
