2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess

Author

Robin, Franck ; Homan, Otte J. ; Bächtold, Wemer

Author_Institution

Lab. for Electromagn. Fields & Microwave Electr., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

2000

fDate

2000

Firstpage

98

Lastpage

101

Abstract

InGaAs/InAlAs/InP HEMTs were studied with an emphasis on the on-state breakdown and high-frequency properties. 2D physical simulations showed an excellent agreement with measured devices. It was demonstrated that an increase of the gate-drain spacing, while keeping the gate-source distance constant by means of an asymmetric gate recess, increases the on-state breakdown voltage. The high-frequency properties are not significantly degraded by the asymmetric gate recess. InP HEMTs with composite channels were also investigated

Keywords

Aluminium compounds; Gallium arsenide; High electron mobility transistors; III-V semiconductors; Indium compounds; Semiconductor device breakdown; Semiconductor device models; 2D simulation; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT; asymmetrical gate recess; composite channel; high frequency properties; on-state breakdown voltage; Electric breakdown; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Microwave technology; Shape; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850241

Filename

850241