• DocumentCode
    2123064
  • Title

    Selectively dry-etched In0.49Ga0.51P/In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma

  • Author

    Yang, S.C. ; Chiol, S.C. ; Chan, Y.-J. ; Lin, H.H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    CHF3+BCl3 mixed-gas reactive ion etching process was used to study the etching characteristics of InGaP materials. After optimizing the etching conditions, we applied this technology to the gate-recess process of InGaP/InGaAs double doped-channel FET (DCFET) fabrication. The maximum transconductance of 180 mS/mm for a gate length of 1.0 μm was obtained, and the cut off frequencies were fi=13 GHz and fmax=30 GHz. InGaP/InGaAs DCFETs biased at class A demonstrated a power-added efficiency of 16.6%, a gain of 7 dB, and an output power density of 185 mW/mm at 1.9 GHz
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; sputter etching; 1.0 micron; 1.9 GHz; 16.6 percent; 7 dB; CHF3+BCl3 plasma; In0.49Ga0.51P-In0.15Ga0.85 As; InGaP/InGaAs double doped channel FET; class A operation; cutoff frequency; fabrication; gate recess process; power-added efficiency; reactive ion etching; selective dry etching; transconductance; trifluoromethane; Double-gate FETs; Fabrication; Gallium arsenide; HEMTs; MODFETs; Plasma applications; Plasma materials processing; Plasma properties; Substrates; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850245
  • Filename
    850245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123064