Title :
Selectively dry-etched In0.49Ga0.51P/In0.15Ga0.85As double doped-channel FETs using CHF3+BCl3 plasma
Author :
Yang, S.C. ; Chiol, S.C. ; Chan, Y.-J. ; Lin, H.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
CHF3+BCl3 mixed-gas reactive ion etching process was used to study the etching characteristics of InGaP materials. After optimizing the etching conditions, we applied this technology to the gate-recess process of InGaP/InGaAs double doped-channel FET (DCFET) fabrication. The maximum transconductance of 180 mS/mm for a gate length of 1.0 μm was obtained, and the cut off frequencies were fi=13 GHz and fmax=30 GHz. InGaP/InGaAs DCFETs biased at class A demonstrated a power-added efficiency of 16.6%, a gain of 7 dB, and an output power density of 185 mW/mm at 1.9 GHz
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; junction gate field effect transistors; sputter etching; 1.0 micron; 1.9 GHz; 16.6 percent; 7 dB; CHF3+BCl3 plasma; In0.49Ga0.51P-In0.15Ga0.85 As; InGaP/InGaAs double doped channel FET; class A operation; cutoff frequency; fabrication; gate recess process; power-added efficiency; reactive ion etching; selective dry etching; transconductance; trifluoromethane; Double-gate FETs; Fabrication; Gallium arsenide; HEMTs; MODFETs; Plasma applications; Plasma materials processing; Plasma properties; Substrates; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850245
